?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com kst2222a rev. b kst2222a npn epitaxial silicon transistor tm may 2006 kst2222a npn epitaxial silicon transistor general purpose transistor absolute maximum ratings t a = 25c unless otherwise noted electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage 75 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current 600 ma p c collector power dissipation 350 mw t stg storage temperature range -55 ~ 150 c symbol parameter test condition min. max. units bv cbo collector-base breakdown voltage i c = 10 a, i e = 0 75 v bv ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 40 v bv ebo emitter-base br eakdown voltage i e = 10 a, i c = 0 6 v i cbo collector cut-off current v cb = 60v, i e = 0 0.01 a h fe dc curren t gain * v ce = 10v, i c = 0.1ma v ce = 10v, i c = 1ma v ce = 10v, i c = 10ma v ce = 10v, i c = 150ma v ce = 10v, i c = 500ma 35 50 75 100 40 300 v ce (sat) collector-emitter saturation voltage * i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma 0.3 1.0 v v v be (sat) base-emitter saturation voltage * i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma 0.6 1.2 2.0 v v f t current gain bandwidth product i c = 20ma, v ce = 20v, f = 100mhz 300 mhz c ob output capacitance v cb = 10v, i e = 0, f = 1mhz 8 pf nf noise figure i c = 100 a, v ce = 10v r s = 1k ? , f = 1mhz 4 db t on turn on time v cc = 30v, i c = 150ma v be = 0.5v, i b1 = 15ma 35 ns t off turn off time v cc = 30v, i c = 150ma, i b1 = i b2 = 15ma 285 ns 1. base 2. emitter 3. collector sot-23 1 2 3 1p marking
2 www.fairchildsemi.com kst2222a rev. b kst2222a npn epitaxial silicon transistor typical performance characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage figure 3. base-emitter saturation voltage figure 4. collector - base leakage current figure 5. output capacitance figure 6. power dissipation vs ambient temperature 1 10 100 50 100 150 200 250 vce=5v 125c 75c 25c hfe, current gain collector current, [ma] 1 10 100 0.1 0.2 0.3 0.4 b=10 125c 75c 25c vce(sat), saturation current,[v] collector current, [ma] 0.1 1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 b=10 125c 75c 25c vbe(sat), saturation current,[v] collector current, [ma] 25 50 75 100 125 150 1 10 100 v cb = 60v leakage current of collector - base(na) temperature, ['c] 1 10 100 0.1 1 10 i e = 0 f = 1m h z c ob [pf], capacitance v cb [v], collector-base voltage 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 p d - power dissipation (w) temperature, [ o c]
3 www.fairchildsemi.com kst2222a rev. b kst2222a npn epitaxial silicon transistor mechanical dimensions 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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